A model to optimize single-junction InGaP based solar cells for
soundly high photovoltaic characteristics is proposed. The simulated
photovoltaic (PV) characteristics include current density (J-V) plots,
open circuit potential (VOC), short circuit photocurrent density (JSC),
fill factor (FF), conversion efficiency (η) spectral response and photo
generation rates, taking into account different structural parameters.
The results are superior to earlier experimental multi-junction InGaP
based solar cells, in terms of η and FF values.  They are also soundly
comparable to earlier simulated PV characteristics.   Starting with a
single-junction InGaP solar cell, the results are potentially useful in
future enhancements of multi-junction (III-V semiconducting materials,
with different band gap values, such as InGaP/GaAs/Ge) solar cell models,
which involve InGaP as front stack. The design concept of InGaP singlejunction
solar
cells
is
described
here,
together
with
key
technologies
to

achieve
high
efficiency
of
18.55%
at
AM1.5
Sun,
using
the
numerical

modeling
TCAD
tool
Silvaco
ATLAS.

Title

Optik - International Journal for Light and Electron Optics

Publisher

Elsevier

Publisher Country

Netherlands

Indexing

Thomson Reuters

Impact Factor

1.0

Publication Type

Prtinted only

Volume

163

Year

2018

Pages

8-15