Effect of under nitrogen annealing on photo-electrochemical characteristics of films deposited from authentic Cu 2 SnSe sources by thermal vacuum under argon gas condensation 3
- Publication Type
- Original research
- Authors
- Hikmat Hilal
- Nordin Sabli
- Zainal Abidin Talib
This communication describes how annealing under nitrogen affects photoelectrochemical
characteristics of films deposited from authentic Cu
sources by
vacuum evaporation under argon gas (low flow rate 5 cm3
2
SnSe
3
/min) using substrate 300 C.
Annealing lowered the photoresponse of the deposited film, by affecting crystallite structure,
morphology, composition and pores in the films. Annealing at temperatures in the
range 150e350
C improved crystallinity of the film but lead to pore formation between
adjacent, which lowered photoresponse by increased resistance across the electrode/redox
interface. Higher temperature (450 oC) annealing lead to SnO formation, as an additional
phase, at the expense of Cu2SnS3
2
decomposition. Porosity and mixed phases with SnO
presumably increased film internal resistance and resulted in poor charge transfer across
the solid/redox couple interface. By affecting film characteristics, annealing lowered
photoresponse for the deposited films.
- Title
- International Journal of Hydrogen Energy
- Publisher
- Elsevier
- Publisher Country
- Netherlands
- Indexing
- Thomson Reuters
- Impact Factor
- 4.8
- Publication Type
- Prtinted only
- Volume
- 42
- Year
- 2017
- Pages
- 9003-9010