SnO2 doped thin films for optoelectronic applications have been prepared by
sputtering from two different targets: ATO (antimony doped tin oxide) and ATZO
(antimony and Zn doped tin oxide). These films have been characterized by electron
probe x-ray microanalysis, x-ray photospectroscopy for the composition, x-ray
diffraction, scanning electron microscopy and atomic force microscopy for the
morphology and the microstructure.
The optical properties have been studied by transparency and reflectivity
measurements. In the case of ATO thin film that have a metallic behavior, some
calculations based on Drude model have been carried out to determine the number of
charge carrier and their optical mobility. The electrical properties of the thin films have
been evaluated from resistivity (four probe set-up) and hall measurements.
Best optoelectronic performance has been obtained for ATO thin film doped with 1.5%
of Sb. Even if the conductivity is lower for ATZO films, the latter can be prepared with
a higher deposition rate and it allows having a conductivity modulation.