Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1−xAlxAs heterostructures are presented and their dependence on various device parameters are examined.Theresultsofthecalculationoftheelectricfieldeffectsontheshapeoftheconfinement potential, the electron concentration and the shape of the wavefunction are presented.
Journal
Title
Superlattices and Microstructures (Impact Factor: 1.98). 07/1998; 24(1):61-67.