Electronic structure of modulation-doped heterostructures: electric field effects
- Publication Type
- Original research
- Authors
- Khaled Ilawi
- M.Tomak
- M. I. El-Kawni
- Fulltext
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Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1−xAlxAs heterostructures are presented and their dependence on various device parameters are examined.Theresultsofthecalculationoftheelectricfieldeffectsontheshapeoftheconfinement potential, the electron concentration and the shape of the wavefunction are presented.
Journal
- Title
- Superlattices and Microstructures (Impact Factor: 1.98). 07/1998; 24(1):61-67.
- Publisher
- --
- Publisher Country
- Palestine
- Publication Type
- Both (Printed and Online)
- Volume
- --
- Year
- 1998
- Pages
- --