Pressure and Temperature Effects on the Magnetic Properties of Donor Impurities in a GaAs/AlGaAs Quantum Heterostructure Subjected to a Magnetic Field
- Publication Type
- Original research
- Authors
- Samah Abuzaid
- ayham shaer
- Mohammad Elsaid
Abstract: The exact diagonalization method has been used to solve the effective-mass Hamiltonian of a single electron confined parabolically in the GaAs/AlGaAs quantum heterostructure, in the presence of a donor impurity and under the effect of an applied uniform magnetic field. The donor impurity is located at distance (d) along the growth direction which is perpendicular to the motion of the electron in a two-dimensional heterostructure layer. We have investigated the dependence of the magnetization (M) and magnetic susceptibility (χ) of a GaAs/AlGaAs quantum heterostructure nanomaterial on the magnetic field strength (߱ ), confining frequency (߱ ), donor impurity position (d), pressure (P) and temperature (T).
Journal
- Title
- Jordan journal of physics
- Publisher
- Yarmouk university
- Publisher Country
- Jordan
- Indexing
- Scopus
- Impact Factor
- 0.0
- Publication Type
- Both (Printed and Online)
- Volume
- 14
- Year
- 2021
- Pages
- 231-238