Optical Proximity Correction (OPC) is still the main stream among Resolution Enhancement Techniques (RETs) for printing advanced technology nodes in optical lithography in the foreseeable future. However, to keep pace with the continuous shrinkage of feature dimensions, OPC algorithms are getting more aggressive to achieve acceptable pattern fidelity on the silicon wafer. This results in outputting complex mask patterns whose manufacturability is degraded. In this paper, we propose an intensity based OPC algorithm to improve mask manufacturability with preserving acceptable pattern fidelity following linearly interpolated intensity error model. Experimental results show the effectiveness of our algorithm on the public benchmarks

Conference Title

The 2016 International Symposium on VLSI Design, Automation and Test (VLSI-DAT 2016)

Conference Country

Taiwan

Conference Date

April 25, 2016 - April 27, 2016

Conference Sponsor

IEEE

Additional Info

Conference Website