Impurity photoionization in semiconductors
- Publication Type
- Original research
- Authors
- Khaled Ilawi
- M.Tomak
- Fulltext
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The dependence of photoionization cross-section on photon energy is calculated using different impurity potentials including the Hülthén potential. The effect of anisotropy is taken into account and is shown to affect the spectral dependence drastically.
Journal
- Title
- Journal of Physics and Chemistry of Solids (Impact Factor: 1.59). 01/1990; 51(4):361-365.
- Publisher
- --
- Publisher Country
- Palestine
- Publication Type
- Both (Printed and Online)
- Volume
- --
- Year
- 1990
- Pages
- --