Polarizabilities of shallow donors and acceptors in finite-barrier GaAs/Ga1−xAlxAs quantum wells are calculated using Hasse's variational method within the effective mass approximation. The effect of spatially dependent screening on polarizabilities is taken into account with an r-dependent dielectric response. It is shown that spatially dependent screening effects can be more important for acceptors than for donors in GaAs/Ga1−xAlxAs quantum wells. The effects of electric and magnetic fields on binding energy are also studied.