SiC-based and Al203-based Si solar cells, together
with a single p-n (Si) homo-junction solar cell, have been investigated.
Open-circuit voltage, short circuit current and cell efficiency for
each solar cell have been measured, under different solar
concentrations. The parameters for all cells were improved with higher
concentration levels. The open circuit voltage reached a maximum value
under 500 sun concentration for each cell. Efficiency values of 31.4%,
27.5% and 20%for the SiC-based cell, Al203-based cell and the
homo-junction cell, respectively, have been obtained, when appropriate
cooling systems were used. Such difference is presumably due to the more
efficient cooling mechanism of the substrates, being more efficient for
SiC. This characteristic, together with cost considerations and
mechanical properties, makes the SiC substrate a good candidate to
support Si thin film solar cells.