This paper presents a comprehensive investigation of the essential properties of topological insulator materials, specifically focusing on 3D crystalline topological insulators. We have examined the crystalline topological insulator tin telluride (SnTe) deposited on a magnetic substrate material. By solving the anisotropic mass Hamiltonian, we obtained expressions for the eigenenergy spectra in the presence of exchange proximity. These energy expressions were then used to study the electronic properties of the material, including bandgap behavior, group velocity, and effective mass, as influenced by the strength of the induced exchange effect.
