Abstract

This work is devoted to the electrodeposition of Cu₂O on copper-substrate (Cu) by linear-sweep-voltammetry (LSV) method at short time of deposition (10 min) and a bath temperature of 50 °C. The influence of potential value ({E₁} = {-100; -200 mV}; {E₂ = -200; -300 mV}, {E₃ = -300; -400 mV}, {E₄= -400; -500 mV}, {E₅ = -500; -600 mV} and {E₆ = -600; -700 mV}) on structural, optical, and morphological properties of the electrodeposited Cu₂O thin-films on Cu-substrate were investigated. The synthesized Cu₂O thin films were analyzed by several techniques such as Raman-spectroscopy, X-ray-diffraction, UV-vis measurements and FEG-Scanning-Electron-Microscopy (FE-SEM-EDS). The X-ray-Diffraction has revealed that the electrodeposited thin-films correspond well to the cubic structure (Pn3 ̅m) and has revealed the good crystallinity for those deposited in the potential range -400 to 500 mV. Raman measurement confirm the cubic crystal structure (Pn3 ̅m) of the synthesized samples, all the thin-films have a high light absorption capacity in the visible spectrum and the estimated value of the optical gap are close to 1.9 eV.

Title

Ismail

Publisher

warad

Publisher Country

Palestine

Publication Type

Prtinted only

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Year

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Pages

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