Pressure and Temperature Effects on the Magnetic Properties of Donor Impurities in a GaAs/AlGaAs Quantum Heterostructure Subjected to a Magnetic Field
Publication Type
Conference Paper
Authors

The exact diagonalization method has been used to solve the effective-mass Hamiltonian of a single electron confined parabolically in the GaAs/AlGaAs quantum heterostructure, in the presence of a donor impurity and under the effect of an applied uniform magnetic field. The donor impurity is located at distance (d) along the growth direction which is perpendicular to the motion of the electron in a two-dimensional heterostructure layer. We have investigated the dependence of the magnetization (M) and magnetic susceptibility (χ) of a GaAs/AlGaAs quantum heterostructure nanomaterial on the magnetic field strength (wc), confining frequency (w. ), donor impurity position (d), pressure (P) and temperature (T).

Conference
Conference Title
Palestinian Conference on Modern Trends in Mathematics and Physics VII (2022)
Conference Country
Palestine
Conference Date
July 30, 2022 - Aug. 1, 2022
Conference Sponsor
Birzeit university
Additional Info
Conference Website