Zaid, S. F. A., Shaer, A., Hjaz, E., Ali, M., & Elsaid, M. K.(2021). Pressure and Temperature Effects on the Magnetic Properties of Donor Impurities in a Gaas/Algaas Quantum Heterostructure Subjected To a Magnetic Field Jordan Journal of Physics. Jordan Journal of Physics14(3). Accepted
- Publication Type
- Original research
- Authors
- Fulltext
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The exact diagonalization method has been used to solve the effective-mass
Hamiltonian of a single electron confined parabolically in the GaAs/AlGaAs quantum
heterostructure, in the presence of a donor impurity and under the effect of applied uniform
magnetic field. The donor impurity is located at distance (d) along the growth direction
which is perpendicular to the motion of the electron in a two-dimensional heterostructure
layer. We have investigated the dependence of the magnetization (M) and magnetic
susceptibility (χ) of a GaAs/AlGaAs quantum heterostructure nanomaterial on the magnetic
field strength (߱
), confining frequency (߱
), donor impurity position (d), pressure (P), and
temperature (T).
Journal
- Title
- Jordan Journal of Physics
- Publisher
- Jordan Journal of Physics
- Publisher Country
- Jordan
- Indexing
- Scopus
- Impact Factor
- None
- Publication Type
- Both (Printed and Online)
- Volume
- --
- Year
- 2021
- Pages
- --