n-GaAs Band-edge Repositioning By Modification with metalloporphyrin/polysiloxane Matrices
نوع المنشور
ورقة مؤتمر

Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN)63-/Fe(CN)64− system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.

عنوان المؤتمر
Proc. Sharjah Solar Energy Conf.
دولة المؤتمر
تاريخ المؤتمر
1 يناير، 2003 - 1 يناير، 2003
راعي المؤتمر