The absorption coefficient of donor impurities located at the centre of a quasi-1D GaAs quantum well wire is calculated as a function of photon energy for different wire widths. The influence of a uniform magnetic field, applied along the axis of the wire, on the optical spectrum associated with the electron transition between the donor ground state and the first conduction subband, the bound-to-band transition, is also investigated.

العنوان

Semiconductor Science and Technology. 01/1994; 9(10):1787-1789. DOI:10.1088/0268-1242/9/10/005

الناشر

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بلد الناشر

فلسطين

نوع المنشور

Both (Printed and Online)

المجلد

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السنة

1994

الصفحات

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