EXAFS measurements were performed, at the In K edge, on devitrified Ge₅Se₈₀In₁₅ and on a series of vitreous Ge–Se–In alloys. The results indicate that the In atoms have essentially the same local surroundings in all of the samples investigated. We found that an In atom is surrounded by three Se atoms at a distance of about 0.259 nm and forms In₂Se₃ microclusters.