The effects of ion implantation on the electrical and structural properties of poly(dimethylsilylene-co-methylphenylsilylene), DMMPS, thin films have been investigated. Ionic species of krypton, arsenic, fluorine, ch1orine, and sulfur were implanted at energies ranging from 35 to 200 keV and with doses of up to 1 x 1016 ion/cm2. The conductivity of the polymer increased, upon implantation, reaching a maximum value of 9.6 x 10-6 (Ωcm)-l for the case of arsenic ion at a dose of 1 x 1016 ion/cm2 and energy of 100 keV. The results showed that ion implantation induced conduction, in DMMPS, was primarily due to structural modifications of the material brought about by the energetic ions. Infrared analysis and Auger electron spectroscopy showed evidence for the formation of a silicon carbide-like structure upon implantation.