Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 °C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (∼ 92% of In₂O₃ theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In₂O₃ only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In₂O₃ forming a solid-solution. A very low value of electrical resistivity is obtained for [In₂O₃:Sn_0.10]:Zn_0.10 (1.7 × 10⁻³ Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.

العنوان

Solid State Sciences Volume 14, Issue 7, Pages 914–919

الناشر

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بلد الناشر

فلسطين

نوع المنشور

Both (Printed and Online)

المجلد

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السنة

2012

الصفحات

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