We used contact resistance measurements as a sensitive probe of near-surface magnetism in GaMnAs by studying the temperature dependence of the contact resistance at Cu/GaMnAs interfaces. The specific contact resistance (AR_C) has a peak that is clearly shifted towards lower temperature than that seen in GaMnAs resistivity. This shift suggests that the magnetization in the GaMnAs film is suppressed near the Cu interface. Furthermore, we show that when a native oxide layer is present between GaMnAs and Cu, the behavior of AR_C is dramatically different, due to the thicker tunnel barrier at the interface.

العنوان

Applied Physics Letters 100, 212-403

الناشر

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بلد الناشر

فلسطين

نوع المنشور

Both (Printed and Online)

المجلد

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السنة

2012

الصفحات

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