Abstract: The exact diagonalization method has been used to solve the effective-mass Hamiltonian of a single electron confined parabolically in the GaAs/AlGaAs quantum heterostructure, in the presence of a donor impurity and under the effect of an applied uniform magnetic field. The donor impurity is located at distance (d) along the growth direction which is perpendicular to the motion of the electron in a two-dimensional heterostructure layer. We have investigated the dependence of the magnetization (M) and magnetic susceptibility (χ) of a GaAs/AlGaAs quantum heterostructure nanomaterial on the magnetic field strength (߱௖ ), confining frequency (߱௢ ), donor impurity position (d), pressure (P) and temperature (T).

العنوان

Jordan journal of physics

الناشر

Yarmouk university

بلد الناشر

الأردن

Indexing

Scopus

معامل التأثير

0,0

نوع المنشور

Both (Printed and Online)

المجلد

14

السنة

2021

الصفحات

231-238